Channeling of Aberration-corrected STEM Probes at the “ Sub-atomic” Scale
نویسندگان
چکیده
The phenomenon of fast electron channeling in atomic crystals has long been appreciated as an important factor in TEM characterization, being particularly critical for consideration in scanning transmission electron microscopy (STEM). As such, electron channeling effects have been examined to understand the thickness-dependence of annular-dark-field (ADF) STEM image contrast [1], the emergence of atomic-scale core-loss electron-energy-loss spectroscopy (EELS) spectrum image contrast [2], the orientation-dependence [3] and spatial localization [4] of X-ray energy dispersive spectroscopy (XEDS) signals, and the detectability of dopant atoms [5]; STEM imaging has, in turn, recently been used to experimentally measure electron channeling behavior [6].
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